Whole-pattern fitting for strain mapping
Fitting entire diffraction patterns for more precise 4D-STEM strain maps, with Samsung.
Nanobeam electron diffraction strain mapping usually measures the positions of individual Bragg disks, throwing away most of the information in each diffraction pattern. I developed a whole-pattern-fitting method that usees all of the available information for improved strain mapping.
These methods are being adopted for semiconductor metrology workflows at Samsung, and I supervise their ongoing development.
Details and a preprint coming soon!